Particle simulation and asymptotic analysis of kinetic equations for modeling a Schottky diode
ESAIM: Modélisation mathématique et analyse numérique, Tome 30 (1996) no. 6, pp. 763-795.
@article{M2AN_1996__30_6_763_0,
     author = {Degond, P. and Poupaud, F. and Yamnahakki, A.},
     title = {Particle simulation and asymptotic analysis of kinetic equations for modeling a {Schottky} diode},
     journal = {ESAIM: Mod\'elisation math\'ematique et analyse num\'erique},
     pages = {763--795},
     publisher = {AFCET - Gauthier-Villars},
     address = {Paris},
     volume = {30},
     number = {6},
     year = {1996},
     mrnumber = {1419938},
     zbl = {0866.65096},
     language = {en},
     url = {http://archive.numdam.org/item/M2AN_1996__30_6_763_0/}
}
TY  - JOUR
AU  - Degond, P.
AU  - Poupaud, F.
AU  - Yamnahakki, A.
TI  - Particle simulation and asymptotic analysis of kinetic equations for modeling a Schottky diode
JO  - ESAIM: Modélisation mathématique et analyse numérique
PY  - 1996
SP  - 763
EP  - 795
VL  - 30
IS  - 6
PB  - AFCET - Gauthier-Villars
PP  - Paris
UR  - http://archive.numdam.org/item/M2AN_1996__30_6_763_0/
LA  - en
ID  - M2AN_1996__30_6_763_0
ER  - 
%0 Journal Article
%A Degond, P.
%A Poupaud, F.
%A Yamnahakki, A.
%T Particle simulation and asymptotic analysis of kinetic equations for modeling a Schottky diode
%J ESAIM: Modélisation mathématique et analyse numérique
%D 1996
%P 763-795
%V 30
%N 6
%I AFCET - Gauthier-Villars
%C Paris
%U http://archive.numdam.org/item/M2AN_1996__30_6_763_0/
%G en
%F M2AN_1996__30_6_763_0
Degond, P.; Poupaud, F.; Yamnahakki, A. Particle simulation and asymptotic analysis of kinetic equations for modeling a Schottky diode. ESAIM: Modélisation mathématique et analyse numérique, Tome 30 (1996) no. 6, pp. 763-795. http://archive.numdam.org/item/M2AN_1996__30_6_763_0/

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